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www.irf.com 1 06/13/08 IRGI4090PBF description this igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak current capability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
e c g n-channel gc e gate collector emitter
v ce min 300 v v ce(on) typ. @ i c = 11a 1.20 v i rp max @ t c = 25c 140 a t j max 150 c key parameters absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v a i c @ t c = 100c continuous collector, v ge @ 15v i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case ??? 3.65 c/w 300 -40 to + 150 10lb in (1.1n m) 34 14 0.27 max. 11 140 21 30
2 www.irf.com half sine wave with duty cycle = 0.05, pw=2sec. r is measured at
pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 300 ??? ??? v v (br)ecs emitter-to-collector breakdown voltage 30 ??? ??? v ? v ces / ? t j breakdown voltage temp. coefficient ??? 0.30 ??? v/c ??? 1.20 ??? ??? 1.67 1.94 2.43 ??? v ??? 3.35 ??? ??? 4.50 ??? ??? 4.75 ??? v ge(th) gate threshold voltage 2.6 ??? 5.0 v ? v ge(th) / ? t j gate threshold voltage coefficient ??? -12 ??? mv/c i ces collector-to-emitter leakage current ??? 2.0 5.0 a ??? 5.0 ??? ??? 100 ??? i ges gate-to-emitter forward leakage ??? ??? 100 na gate-to-emitter reverse leakage ??? ??? -100 g fe forward transconductance ??? 11 ??? s q g total gate charge ??? 34 ??? nc q gc gate-to-collector charge ??? 9.6 ??? t d(on) turn-on delay time ??? 20 ??? i c = 11a, v cc = 240v t r rise time ??? 14 ??? ns r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time ??? 99 ??? t j = 25c t f fall time ??? 68 ??? t d(on) turn-on delay time ??? 19 ??? i c = 11a, v cc = 240v t r rise time ??? 15 ??? ns r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time ??? 139 ??? t j = 150c t f fall time ??? 129 ??? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j c ies input capacitance ??? 1153 ??? c oes output capacitance ??? 59 ??? pf c res reverse transfer capacitance ??? 27 ??? l c internal collector inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l e internal emitter inductance ??? 7.5 ??? from package v ge = 15v, i ce = 120a static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 90a, t j = 150c 549 ??? reference to 25c v ge = 30v v ge = -30v v ce = 300v, v ge = 0v, t j = 100c v cc = 240v, v ge = 15v, r g = 5.1 ? v ce = v ge , i ce = 250a v ce = 300v, v ge = 0v v ce = 300v, v ge = 0v, t j = 150c ??? 637 ??? v ce = 25v, i ce = 11a v ce = 200v, i c = 11a, v ge = 15v v cc = 240v, r g = 5.10 ?, t j = 25c ??? ? = 1.0mhz, see fig.13 and center of die contact conditions v ge = 0v, i ce = 500a reference to 25c, i ce = 5.0a v ge = 15v, i ce = 90a v ge = 15v, i ce = 11a v ge = 15v, i ce = 30a v ge = 0v, i ce = 1.0a v ge = 15v, i ce = 60a v ce = 30v v ge = 0v l =220nh, c= 0.10f, v ge = 15v l =220nh, c= 0.10f, v ge = 15v v cc = 240v, r g = 5.10 ?, t j = 100c
www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0 5 10 15 20 25 30 v ce (v) 0 40 80 120 160 200 240 280 320 i c e ( a ) top vge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0 5 10 15 20 25 30 v ce (v) 0 40 80 120 160 200 240 280 i c e ( a ) top vge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0 5 10 15 20 25 30 v ce (v) 0 40 80 120 160 200 240 280 i c e ( a ) top vge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0 5 10 15 20 25 30 v ce (v) 0 40 80 120 160 200 240 i c e ( a ) top vge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0 5 10 15 20 v ge (v) 0 40 80 120 160 200 240 i c e ( a ) t j = 25c t j = 150c 0 5 10 15 20 v ge (v) 0 5 10 15 20 v c e ( v ) t j = 25c t j 150c i c = 11a
4 www.irf.com fig 7. maximum collector current vs. case temperature fig 8. typical repetitive peak current vs. case temperature fig 10. typical e pulse vs. collector-to-emitter voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area 120 125 130 135 140 145 150 155 160 165 170 i c , peak collector current (a) 0 1000 2000 3000 4000 5000 6000 7000 8000 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 180 190 200 210 220 230 240 v ce, collector-to-emitter voltage (v) 1000 2000 3000 4000 5000 6000 7000 8000 e n e r g y p e r p u l s e ( j ) 100c 25c v cc = 240v l = 220nh c = 0.40f 25 50 75 100 125 150 t j , temperature (oc) 400 1400 2400 3400 4400 5400 6400 7400 8400 9400 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.2f c= 0.1f 1 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1msec 10sec 100sec t c = 25c t j = 150c single pulse 20 40 60 80 100 120 140 160 t c (c) 0 5 10 15 20 25 i c ( a ) 25 50 75 100 125 150 case temperature (c) 0 20 40 60 80 100 120 140 160 r e p e t i t i v e p e a k c u r r e n t ( a ) pw= 2s duty cycle <= 0.05 half sine wave
www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 50 100 150 200 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.24132 0.000104 0.68173 0.001551 1.10405 0.071769 1.62289 1.9251 0 10203040 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) i c = 11a v ces = 240v v ces = 150v v ces = 60v
6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l fig. 17 - gate charge circuit (turn-off) dri ver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st
www.irf.com 7 to-220ab full-pak package is not recommended for surface mount application. data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/08

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to-220 full-pak package outline dimensions are shown in millimeters (inches) to-220 full-pak part marking information

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